Bahan Ajar Elektronika Dasar

BAHAN AJAR
 

 

 

ELEKTRONIKA 

DASAR 

SATUAN  ACARA  PERKULIAHAN
MATA  KULIAH  ELEKTRONIKA DASAR
KODE / SKS : MTK224 / 2  SKS 

Dosen Pengasuh  : Ahamad Fali Oklilas
NIP : 

132231465 

Program Studi 

: Teknik Komputer 

Kelas/angkatan : 

Teknik 

Komputer/2006 

Minggu
ke 

Pokok Bahasan
  

Sub Pokok
Bahasan 

Tujuan
Instruksional
Khusus 

Ref.  

1 Tingkat 

Energi 

Pada 

Zat Padat  

Transport Sistem Pada 

Semikonduktor  

Pengantar




Energi Atom


Prinsip Dasar
Pada Zat Padat



Prinsip
Semikonduktor
 

Muatan Partikel
Intensitas,
Tegangan dan
Energi

Satuan eV untuk
Energi

Tingkat Energi
Atom
Struktur Elektronik
dari Element

Mobilitas dan
Konduktivitas
Elektron dan Holes

Donor dan Aseptor
Kerapatan Muatan
Sifat Elektrik
 

2 

Karakteristik Dioda 

Prinsip Dasar  

Rangkaian  terbuka
p-n Junction
Penyerarah pada p-
n Junction
 

3 

Karakterisrik Dioda 

Sifat Dioda 

Sifat Volt-Ampere
Sifat
ketergantungan
Temperatur
Tahanan Dioda
Kapaitas
 

1,2 

4 

Karakteristik Dioda 

Jenis Dioda 

Switching Times
Breakdown Dioda
Tunnel Dioda
Semiconductor
Photovoltaic Effect
Light Emitting
Diodes
 

5 Rangkaian 

Dioda 

Dasar  

Dioda 

sebagai 

elemen rangkaian
Prinsip garis beban
Model dioda
Clipping
 

6 

Rangkaian Dioda 

Lanjut  

Comparator
Sampling gate
Penyearah
Penyearah
gelombang penuh
Rangkaian lainnya
 

MID TEST/UTS 

7 

Rangkaian Transistor  

Sifat Transistor 

Transistor Junction
Komponen
Transistor
Transistor Sebagai
Penguat
(Amplifier)
Konstruksi
Transistor
 

8 

Rangkaian Transistor  

Sifat Transistor  

Konfigurasi
Common Base
Konfigurasi
Common Emitor
CE Cutoff
CE Saturasi
CE Current Gain
Konfigurasi
Common Kolektor
 

1 

9 

Rangkaian Transistor  

Transistor  Pada
Frekuensi
Rendah  

Analisis Grafik
Konfigurasi CE
Model Two Port
Device
Model Hybrid
Parameter h
 

10  

Rangkaian Transistor  

Transistor  Pada
Frekuensi
Rendah  

Thevenin & Norton
Emitter Follower
Membandingkan
Konfigurasi
Amplifier
Teori Miller
  

11 Rangkaian 

Transistor 

Field Effect Transistor 

Transistor Pada
frekuensi
Tinggi

Sifat Dasar


Rangkaian
Dasar  

Model Hybrid

JFET
Karakteristik Volt
Amper

FET
MOSFET
Voltager Variable
Resitor
 

12 

Studi Kasus  

Penerapan
Transistor 

Sebagai Osilator
Sebagai Penguat
Sebagai Sensor
 

1 

FINAL TEST 

Buku Acuan : 

1.

Chattopadhyay, D. dkk, Dasar Elektronika, Penerbit Universitas Indonesia, Jakarta:1989. 

2.

Millman, 

Halkias, 

Integrated 

Electronics,        

Mc Graw Hill, Tokyo, 1988 

3.

http://WWW.id.wikipedia.org 

4.

http://www.tpub.com/content/ 

5.

http://www.electroniclab.com/ 

Palembang, 7 Feb 2007 

Dosen Pengampu,
 

Ahmad Fali Oklilas, MT 

NIP. 132231465 

 

ATURAN PERKULIAHAN ELEKTRONIKA DASAR  

DAFTAR HADIR MIN = 80% X 16= 14
KOMPONEN NILAI 

TUGAS/QUIS  = 25%
UTS = 

30% 

UAS = 

45% 

Nilai Mutlak
86 – 100   = A
71 – 85    = B 

56 – 70   = C
41 – 55   = D
≤ 40  

= E 

Keterlambatan kehadiran dengan toleransi 15 menit
 

Buku Acuan : 

1.

Chattopadhyay, D. dkk, Dasar Elektronika, 

Penerbit Universitas Indonesia,
Jakarta:1989. 

2.

Millman, Halkias, Integrated  Electronics,      
Mc Graw Hill, Tokyo, 1988 

3.

http://WWW.id.wikipedia.org 

4.

http://www.tpub.com/content/ 

5.

http://www.electroniclab.com/ 

 

 

 

 

 

 

Tingkat Energi Pada Zat Padat  

Electron’s Energy Level 

The NEUTRON is a neutral particle in that it has no 

electrical charge. The mass of the neutron is
approximately equal to that of the proton. 

An ELECTRON’S ENERGY LEVEL is the amount of 

energy required by an electron to stay in orbit. Just by 

the electron’s motion alone, it has kinetic energy. The
electron’s position in reference to the nucleus gives it
potential energy. An energy balance keeps the 

electron in orbit and as it gains or loses energy, it
assumes an orbit further from or closer to the center 

of the atom.  

SHELLS and SUBSHELLS are the orbits of the 

electrons in an atom. Each shell can contain a
maximum number of electrons, which can be 

determined by the formula 2n 

2

. Shells are lettered K 

through Q, starting with K, which is the closest to the
nucleus. The shell can also be split into four subshells 

labeled s, p, d, and f, which can contain 2, 6, 10, and
14 electrons, respectively.  

VALENCE is the ability of an atom to combine with 

other atoms. The valence of an atom is determined by 

the number of electrons in the atom’s outermost shell.
This shell is referred to as the VALENCE SHELL. The 

electrons in the outermost shell are called VALENCE
ELECTRONS.  

IONIZATION is the process by which an atom loses 

or gains electrons. An atom that loses some of its 

electrons in the process becomes positively charged
and is called a POSITIVE ION. An atom that has an 

excess number of electrons is negatively charged and
is called a NEGATIVE ION.  

ENERGY BANDS are groups of energy levels that 

result from the close proximity of atoms in a solid. The 

three most important energy bands are the
CONDUCTION BAND, FORBIDDEN BAND, and
VALENCE BAND. 

Electrons and holes in semiconductors 

As pointed out before, semiconductors distinguish 

themselves from metals and insulators by the fact that 

they contain an "almost-empty" conduction band and
an "almost-full" valence band. This also means that we 

will have to deal with the transport of carriers in both
bands.  

To facilitate the discussion of the transport in the 

"almost-full" valence band we will introduce the
concept of holes in a semiconductor. It is important for 

the reader to understand that one could deal with only
electrons (since these are the only real particles 

available in a semiconductor) if one is willing to keep
track of all the electrons in the "almost-full" valence 

band.  

The concepts of holes is introduced based on the 

notion that it is a whole lot easier to keep track of the 

missing particles in an "almost-full" band, rather than
keeping track of the actual electrons in that band. We 

will now first explain the concept of a hole and then
point out how the hole concept simplifies the analysis.  

Holes are missing electrons. They behave as 

particles with the same properties as the electrons 

would have occupying the same states except that
they carry a positive charge. This definition is
illustrated further with the figure below which presents 

the simplified energy band diagram in the presence of
an electric field.  

band1.gif 

Fig.2.2.12 Energy band diagram in the presence
of a uniform electric field. Shown are electrons
(red circles) which move against the field and
holes (blue circles) which move in the direction of
the applied field. 

A uniform electric field is assumed which causes a 

constant gradient of the conduction and valence band 

edges as well as a constant gradient of the vacuum
level. The gradient of the vacuum level requires some
further explaination since the vacuum level is 

associated with the potential energy of the electrons
outside the semiconductor. However the gradient of 

the vacuum level represents the electric field within
the semiconductor.  

The electrons in the conduction band are 

negatively charged particles which therefore move in a 

direction which opposes the direction of the field.
Electrons therefore move down hill in the conduction
band. Electrons in the valence band also move in the 

same direction. The total current due to the electrons
in the valence band can therefore be written as:  

(f36) 

where  V is the volume of the semiconductor, q is 

the 

electronic charge

 and v is the electron velocity. 

The sum is taken over all occupied or filled states in
the valence band. This expression can be reformulated 

by first taking the sum over all the states in the
valence band and subtracting the current due to the 

electrons which are actually missing in the valence
band. This last term therefore represents the sum 

taken over all the empty states in the valence band,
or:  

(f37) 

The sum over all the states in the valence band 

has to equal zero since electrons in a completely filled
band do not contribute to current, while the remaining 

term can be written as:  

(f38) 

which states that the current is due to positively 

charged particles associated with the empty states in
the valence band. We call these particles holes. Keep 

in mind that there is no real particle associated with a
hole, but rather that the combined behavior of all the
electrons which occupy states in the valence band is 

the same as that of positively charge particles
associated with the unoccupied states.  

The reason the concept of holes simplifies the 

analysis is that the density of states function of a 

whole band can be rather complex. However it can be
dramatically simplified if only states close to the band 

edge need to be considered.  

As illustrated by the above figure, the holes move 

in the direction of the field (since they are positively 

charged particles). They move upward in the energy
band diagram similar to air bubbles in a tube filled 

with water which is closed on each end.  

Distribution functions 

1. Introduction 

The distribution or probability density functions 

describe the probability with which one can expect 

particles to occupy the available energy levels in a
given system. While the actual derivation belongs in a 

course on statistical thermodynamics it is of interest to
understand the initial assumptions of such derivations 

and therefore also the applicability of the results.  

The 

derivation

 starts from the basic notion that 

any possible distribution of particles over the available 

energy levels has the same probability as any other
possible distribution, which can be distinguished from 

the first one.  

In addition, one takes into account the fact that 

the total number of particles as well as the total
energy of the system has a specific value.  

Third, one must acknowledge the different 

behavior of different particles. Only one Fermion can
occupy a given energy level (as described by a unique 

set of quantum numbers including spin). The number
of bosons occupying the same energy levels is 

unlimited. Fermions and Bosons all "look alike" i.e.
they are indistinguishable. Maxwellian particles can be 

distinguished from each other.  

The 

derivation

 then yields the most probable 

distribution of particles by using the Lagrange method
of indeterminate constants. One of the Lagrange
constants, namely the one associated with the 

average energy per particle in the distribution, turns
out to be a more meaningful physical variable than the 

total energy. This variable is called the Fermi energy,
E

F

.  

An essential assumption in the derivation is that 

one is dealing with a very large number of particles. 

This assumption enables to approximate the factorial
terms using the 

Stirling approximation

.